Miley
Member
A research team at Seoul national university (SNU) in South Korea has successfully grown a Micro LED array on a 100nm sapphire nanofilm.
SNU, according to paper, department of materials science and engineering team to design a sapphire nanometer film array, used to grow size is 4 u m Χ 16 microns Micro LED array. This method can realize the monolithic Micro LED chip without the plasma etching process, providing higher external quantum efficiency (EQE).
Image Source: scientific reports /SNU
Compared with gallium nitride-based Micro leds grown on flat substrates, the new method of growing Micro leds on sapphire nanoscale films reduced the dislocation density of Micro leds by 59.6% and improved the internal quantum efficiency (IQE) by 44%. In addition, the Micro LED generated by this method is 3.3 times more photoluminescent.
At the same time, the sapphire nanofilm can also be destroyed by mechanical force, so Micro LED can be easily separated from the substrate and transferred to the display drive backplane, simplifying the manufacturing process and reducing costs.
The research team believes that this technology breakthrough overcomes the limitations of the current Micro LED manufacturing process and will accelerate the commercialization of Micro LED display technology.
The results are reported in the journal Scientific Reports. In addition to the SNU researchers, the Samsung Advanced Institute of Technology, the Korea Institute of science and Technology (KAIST) and the Korea Photonics Institute are involved in the research. It is also supported by Samsung Future Technology Promotion Center, the BK21 Plus project of the ministry of education and the Korea Research Foundation.
SNU, according to paper, department of materials science and engineering team to design a sapphire nanometer film array, used to grow size is 4 u m Χ 16 microns Micro LED array. This method can realize the monolithic Micro LED chip without the plasma etching process, providing higher external quantum efficiency (EQE).
Image Source: scientific reports /SNU
Compared with gallium nitride-based Micro leds grown on flat substrates, the new method of growing Micro leds on sapphire nanoscale films reduced the dislocation density of Micro leds by 59.6% and improved the internal quantum efficiency (IQE) by 44%. In addition, the Micro LED generated by this method is 3.3 times more photoluminescent.
At the same time, the sapphire nanofilm can also be destroyed by mechanical force, so Micro LED can be easily separated from the substrate and transferred to the display drive backplane, simplifying the manufacturing process and reducing costs.
The research team believes that this technology breakthrough overcomes the limitations of the current Micro LED manufacturing process and will accelerate the commercialization of Micro LED display technology.
The results are reported in the journal Scientific Reports. In addition to the SNU researchers, the Samsung Advanced Institute of Technology, the Korea Institute of science and Technology (KAIST) and the Korea Photonics Institute are involved in the research. It is also supported by Samsung Future Technology Promotion Center, the BK21 Plus project of the ministry of education and the Korea Research Foundation.
